EL814
Description
The EL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in side-lead spacing and SMD option.
Key Features
- AC input response
- Current transfer ratio (CTR: Min. 20% at IF =±1mA ,VCE =5V)
- High isolation voltage between input and output (Viso=5000 V rms )
- Wide Operating temperature range -55~110ºC
- High collector-emitter voltage VCEO=80V
- Compact dual-in-line package
- Pb free and RoHS compliant.
- UL and cUL approved(No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
