EMB03N06HS Datasheet, Transistor, Excelliance MOS

PDF File Details

Part number:

EMB03N06HS

Manufacturer:

Excelliance MOS

File Size:

499.07kb

Download:

📄 Datasheet

Description:

Single n-channel logic level enhancement mode field effect transistor. N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.5mΩ ID @TC=25℃ 166A ID @TA=25℃ 22A Single N Channel MOSF

TAGS

EMB03N06HS

Excelliance MOS

📁 Related Datasheet

EMB03N03A - MOSFET (Excelliance MOS)
EMB03N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.5mΩ ID 80A G UIS, Rg 1.

EMB03N03H - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.0mΩ ID 75A G UIS, Rg 100% Tested .

EMB03N03HR - MOSFET (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 3.0mΩ ID 75A G N Channel MOSFET UI.

EMB03N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 3.0mΩ ID 37A N Channel MOSFET UIS, Rg .

EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
(Preliminary) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.).

EMB03P03A - MOSFET (Excelliance MOS)
EMB03P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.3mΩ ID ‐85A G UIS, Rg.

EMB03P03H - MOSFET (Excelliance MOS)
EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.1mΩ ID ‐85A G UIS, Rg.

EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..

EMB02N03HR - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N03HS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.