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EMB03N06HS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 3.0mΩ 4.5mΩ 166A ID @TA=25℃ 22A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-

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Datasheet Details

Part number EMB03N06HS
Manufacturer Excelliance MOS
File Size 372.40 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB03N06HS Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 3.0mΩ 4.5mΩ 166A ID @TA=25℃ 22A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current TA = 25 °C TA = 70 °C ID Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH EAS Repetitive Avalanche Energy2 L = 0.
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