EMD04N06F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Excelliance MOS

Datasheet Details

Part number	EMD04N06F
Manufacturer	Excelliance MOS
File Size	359.95 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD04N06F Datasheet
Additional preview pages of the EMD04N06F datasheet.

Product details

Description

BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free EMD04N06F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 75 ID TC = 100 °C 45 IDM 160 Avalanche Current IAS 70 Avalanche Energy L = 0.1mH, ID=70A, RG=25Ω EAS 245 Repetitive Avalanche Energy2 L = 0.05mH EAR 122

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Published: Apr 26, 2017 |