EMD04N06FN Datasheet - Excelliance MOS

EMD04N06FN N?Channel Logic Level Enhancement Mode Field Effect Transistor

EMD04N06FN N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=70A, RG=25Ω L = 0.05m.

EMD04N06FN-ExcellianceMOS.pdf

EMD04N06FN Datasheet Preview — Preview of EMD04N06FN PDF

Datasheet Details

Part number:

EMD04N06FN

Manufacturer:

Excelliance MOS

File Size:

199.70 KB

Description:

N?channel logic level enhancement mode field effect transistor.

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EMD04N06FN EMD04N06FN N ?Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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