EMD04N06FN Datasheet, Transistor, Excelliance MOS

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Part number:

EMD04N06FN

Manufacturer:

Excelliance MOS

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199.70kb

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📄 Datasheet

Description:

N?channel logic level enhancement mode field effect transistor.

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📁 Related Datasheet

EMD04N06F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Sin.

EMD04N06A - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 80A G UIS, Rg 1.

EMD04N06E - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 155A G UIS, Rg .

EMD04N06H - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 100.

EMD04N04E - MOSFET (Excelliance MOS)
EMD04N04E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 4mΩ ID 155A G UIS, Rg 10.

EMD04N04H - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N04H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 4mΩ ID 80A G UIS, Rg 100.

EMD04N08E - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 4.6mΩ ID 160A G UIS, Rg .

EMD04N08FN - N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD04N08FN N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 10.

EMD04N10E - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V .

EMD04N60AB - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S .