EMD04N80F Datasheet - Excelliance MOS

EMD04N80F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 800V D RDSON (MAX.) 3.0Ω ID 4A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=4A, RG=25Ω L = 0.5mH Power Dissipation TC =.

EMD04N80F Datasheet (166.01 KB)

EMD04N80F Datasheet Preview — Preview of EMD04N80F PDF

Datasheet Details

Part number:

EMD04N80F

Manufacturer:

Excelliance MOS

File Size:

166.01 KB

Description:

Mosfet.

📁 Related Datasheet

EMD04N80CS MOSFET (Excelliance MOS)

EMD04N04E MOSFET (Excelliance MOS)

EMD04N04H N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD04N06A N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD04N06E N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD04N06F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD04N06FN N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD04N06H N?Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMD04N80F MOSFET Excelliance MOS

EMD04N80F Distributor