EMD05N50F Datasheet - Excelliance MOS

EMD05N50F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 1.85Ω ID 5A G UIS, 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=5A, RG=25Ω L = 0.5mH Power Dissipation TC = 25 °C TC = 10.

EMD05N50F Datasheet (170.65 KB)