EMD05N50A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.85Ω
ID 5A
G
UIS, 10.
EMD05N50CS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.85Ω
ID 5A
G
UIS, 10.
EMD05N70CS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
2.5Ω
ID 5A
G
UIS, 100.
EMD05N70F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
2.5Ω
ID 5A
G
UIS, 100.
EMD02N60A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID
2A
G
UIS, 100% Tested
S
.