EMD02N06TL8
Excelliance MOS
509.46kb
Single n-channel logic level enhancement mode field effect transistor. N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Teste
TAGS
📁 Related Datasheet
EMD02N06E - MOSFET
(Excelliance MOS)
EMD02N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg .
EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
100V
RDSON (TYP.)@VGS=10V .
EMD02N60A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID
2A
G
UIS, 100% Tested
S
.
EMD02N60AK - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID
2A
G
UIS, 100% Tested
S
.
EMD02N60CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID
2A
G
UIS, 100% Tested
S
.
EMD02N60CSK - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID
2A
G
UIS, 100% Tested
S
.
EMD02N60F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID
2A
G
UIS, 100% Tested
S
.
EMD02N70CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
6Ω
ID
2A
G
UIS, 100% Tested
S
Pb.
EMD03N05HS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
50V
D
RDSON (MAX.)
3.5mΩ
ID 85A G
UIS, Rg .
EMD03N06E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.5mΩ
ID
180A
G
UIS, .