EMD02N06TL8 Datasheet, Transistor, Excelliance MOS

PDF File Details

Part number:

EMD02N06TL8

Manufacturer:

Excelliance MOS

File Size:

509.46kb

Download:

📄 Datasheet

Description:

Single n-channel logic level enhancement mode field effect transistor. N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Teste

Datasheet Preview: EMD02N06TL8 📥 Download PDF (509.46kb)
Page 2 of EMD02N06TL8 Page 3 of EMD02N06TL8

TAGS

EMD02N06TL8
Single
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
Excelliance MOS

📁 Related Datasheet

EMD02N06E - MOSFET (Excelliance MOS)
EMD02N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.1mΩ ID 191A G UIS, Rg .

EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V .

EMD02N60A - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N60AK - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S .

EMD02N60CS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N60CSK - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S .

EMD02N60F - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N70CS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 6Ω ID 2A G UIS, 100% Tested S Pb.

EMD03N05HS - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  50V  D RDSON (MAX.)  3.5mΩ  ID  85A  G   UIS, Rg .

EMD03N06E - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  60V  D RDSON (MAX.)  3.5mΩ  ID  180A  G   UIS, .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts