EMD07N08E Datasheet - Excelliance MOS

EMD07N08E MOSFET

EMD07N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 7mΩ ID 128A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=90A, RG=25Ω L = 0.05mH Power Dissip.

EMD07N08E Datasheet (226.48 KB)