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EMD09N08E Datasheet - Excelliance MOS

EMD09N08E MOSFET

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  80V  D RDSON (MAX.)  9mΩ  ID  103A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.3mH, ID=45A, RG=25Ω  L = 0.1mH  .

EMD09N08E Datasheet (226.46 KB)

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Datasheet Details

Part number:

EMD09N08E

Manufacturer:

Excelliance MOS

File Size:

226.46 KB

Description:

Mosfet.

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EMD09N08E MOSFET Excelliance MOS

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