EMD12N06H
Excelliance MOS
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EMD12N06A - MOSFET
(Excelliance MOS)
EMD12N06A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
12mΩ
ID
48A
G
UIS, Rg 10.
EMD12N10E - MOSFET
(Excelliance MOS)
EMD12N10E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
11.5mΩ
ID
95A
G
UIS, Rg.
EMD12N10H - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID
50A
G
UIS, Rg 100% Tested
.
EMD12N60F - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
0.75Ω
ID
12A
G
UIS, 100% Tested
S.
EMD12 - Power management (dual digital transistors)
(Rohm)
EMD12 / UMD12N
Transistors
Power management (dual digital transistors)
EMD12 / UMD12N
Features 1) Both the DTA144E and DTC144E in a EMT or UMT packa.
EMD12 - Dual Digital Transistors
(JCET)
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMD12 Dual Digital Transistors (NPN+PNP)
FEATURES z.
EMD12 - General purpose transistors
(Jin Yu Semiconductor)
General purpose transistors (dual transistors)
FEATURES z Both the DTC144E chip and DTA144E chip in a package z Mounting possible with SOT-563 automat.
EMD10 - Dual Digital Transistors
(JCET)
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMD10 Dual Digital Transistors (NPN+PNP)
FEATURES z.
EMD10N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMD10N06A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
10mΩ
ID
53A
G
UIS, Rg 10.
EMD10N06E - MOSFET
(Excelliance MOS)
EMD10N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
10mΩ
ID
100A
G
UIS, Rg 1.