Datasheet4U Logo Datasheet4U.com

EMD12N06H Datasheet - Excelliance MOS

EMD12N06H MOSFET

EMD12N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 12mΩ ID 48A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=40A, RG=25Ω L = 0.0.

EMD12N06H Datasheet (206.51 KB)

Preview of EMD12N06H PDF
EMD12N06H Datasheet Preview Page 2 EMD12N06H Datasheet Preview Page 3

Datasheet Details

Part number:

EMD12N06H

Manufacturer:

Excelliance MOS

File Size:

206.51 KB

Description:

Mosfet.

📁 Related Datasheet

EMD12N06A MOSFET (Excelliance MOS)

EMD12N10E MOSFET (Excelliance MOS)

EMD12N10H MOSFET (Excelliance MOS)

EMD12N60F N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD12 Power management (dual digital transistors) (Rohm)

EMD12 Dual Digital Transistors (JCET)

EMD12 General purpose transistors (Jin Yu Semiconductor)

EMD10 Dual Digital Transistors (JCET)

TAGS

EMD12N06H MOSFET Excelliance MOS

EMD12N06H Distributor