EMD14N10H

Part number:

EMD14N10H

Manufacturer:

Excelliance MOS

File Size:

206.32 KB

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📄 Download EMD14N10H Datasheet PDF

Description:

Mosfet.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RD.
SON (MAX.) 14mΩ ID 47A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE .

EMD14N10CS Datasheet PDF

EMD14N10CS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested .

EMD14N10F Datasheet PDF

EMD14N10F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested .

EMD14N50F Datasheet PDF

EMD14N50F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 0.6Ω ID 14A G UIS, 100% Tested S .

EMD10 Datasheet PDF

EMD10, JCET
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMD10 Dual Digital Transistors (NPN+PNP) FEATURES z.

EMD10N06A Datasheet PDF

EMD10N06A, Excelliance MOS
EMD10N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 10mΩ ID 53A G UIS, Rg 10.

EMD10N06E Datasheet PDF

EMD10N06E, Excelliance MOS
EMD10N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 10mΩ ID 100A G UIS, Rg 1.

EMD10N70F Datasheet PDF

EMD10N70F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 1.2Ω ID 10A G UIS, 100% Tested S .

EMD11N15E Datasheet PDF

EMD11N15E, Excelliance MOS
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 150V RDSON (MAX.)@VGS=10V .

MOSFET

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