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EMD10N70F Datasheet - Excelliance MOS

EMD10N70F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 1.2Ω ID 10A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=10A, RG=25Ω L = 0.05mH Power Dissipation T.

EMD10N70F Datasheet (165.68 KB)

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Datasheet Details

Part number:

EMD10N70F

Manufacturer:

Excelliance MOS

File Size:

165.68 KB

Description:

Mosfet.

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