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EMD16N08H Datasheet - Excelliance MOS

EMD16N08H N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 12.8mΩ ID 47A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=30A, RG=25Ω L = 0.05mH Power Dissip.

EMD16N08H Datasheet (205.49 KB)

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Datasheet Details

Part number:

EMD16N08H

Manufacturer:

Excelliance MOS

File Size:

205.49 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMD16N08H N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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