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EMD25N10A Datasheet - Excelliance MOS

EMD25N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 25mΩ ID 35A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH EAS L = 0.05mH.

EMD25N10A Datasheet (840.39 KB)

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Datasheet Details

Part number:

EMD25N10A

Manufacturer:

Excelliance MOS

File Size:

840.39 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMD25N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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