EMDA2N20A Datasheet - Excelliance MOS

EMDA2N20A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 120mΩ ID 18A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 1mH, ID=11A, RG=25Ω L = 0.5mH Power Dissipation T.

EMDA2N20A Datasheet (247.30 KB)