EMDA2N20A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
120mΩ
ID
18A
G
UIS, 100% Tested
S.
EMDA0P10F - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐100V
RDSON (MAX.)
120mΩ
ID
‐22A
G
UIS, Rg 100% Test.
EMDA0P10G - MOSFET
(Excelliance MOS)
.
EMDA1N10A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID
15A
G
UIS, Rg 100% Tested.
EMDA1N10F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID
15A
G
UIS, Rg 100% Tested.
EMDA4N20A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
140mΩ
ID
15A
G
UIS, 100% Tested
S.
EMDA5N10A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID
10A
G
UIS, Rg 100% Tested.
EMDA5N10F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
Pin Description:
BVDSS
100V
RDSON (MAX.)
150mΩ
ID
10A
.