EMDA5N10F
Excelliance MOS
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Single n-channel logic level enhancement mode field effect transistor. BVDSS 100V RDSON (MAX.) 150mΩ ID 10A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUT
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EMDA5N10A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
150mΩ
ID 10A G
UIS, Rg.
EMDA0P10F - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
D
RDSON (MAX.)
120mΩ
ID
‐22A
G
UIS.
EMDA0P10G - MOSFET
(Excelliance MOS)
.
EMDA1N10A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID 15A G
UIS, Rg.
EMDA1N10F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID 15A G
UIS, Rg.
EMDA2N20A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
120mΩ
ID
18A
G
UIS, 100% Tested
S.
EMDA2N20F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
120mΩ
ID 18A G
UIS, 10.
EMDA4N20A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
140mΩ
ID 15A G
UIS, 10.
EMD02N06E - MOSFET
(Excelliance MOS)
EMD02N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg .
EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMD02N06TL8
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
60V
RDSON (MA.