EMF14A02V Datasheet - Excelliance MOS

EMF14A02V MOSFET

EMF14A02V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 14.8mΩ ID 7A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EAS Repetitive Avalanche En.

EMF14A02V-ExcellianceMOS.pdf