EMF02P02H Datasheet - Excelliance MOS

EMF02P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMF02P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 3.2mΩ ID ‐100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±12 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C ‐100 ID TC = 100 °C ‐73 IDM ‐400 Avalanche Current IAS ‐100 Avalanche Energy L = 0.1mH, .

EMF02P02H Datasheet (206.75 KB)

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Datasheet Details

Part number:

EMF02P02H

Manufacturer:

Excelliance MOS

File Size:

206.75 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMF02P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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