EMF04P02V Datasheet - Excelliance MOS

EMF04P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 6.3mΩ ID -46A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current TC = 25 °C -46 ID TA = 25 °C -16 Pulsed Drain Current1 TC = 100 °C -29 IDM -180 Avalanche Current IAS -48 Avalanche Energy.

EMF04P02V-ExcellianceMOS.pdf

EMF04P02V Datasheet Preview — Preview of EMF04P02V PDF

Datasheet Details

Part number:

EMF04P02V

Manufacturer:

Excelliance MOS

File Size:

867.40 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMF04P02V EMF04P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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