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EMF04P02H Datasheet - Excelliance MOS

EMF04P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMF04P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 5.5mΩ ID ‐72A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐72 ID TC = 100 °C ‐45 IDM ‐240 Avalanche Current IAS ‐48 Avalanche Energy L = 0.1mH, IAS=.

EMF04P02H Datasheet (231.83 KB)

EMF04P02H Datasheet Preview — Preview of EMF04P02H PDF

Datasheet Details

Part number:

EMF04P02H

Manufacturer:

Excelliance MOS

File Size:

231.83 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMF04P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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