EMF09P02V Datasheet - Excelliance MOS

EMF09P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 9.5mΩ ID -24A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current ID TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) TC = 100 °C Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0..

EMF09P02V-ExcellianceMOS.pdf

EMF09P02V Datasheet Preview — Preview of EMF09P02V PDF

Datasheet Details

Part number:

EMF09P02V

Manufacturer:

Excelliance MOS

File Size:

879.44 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMF09P02V EMF09P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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