EMF09P02A Datasheet - Excelliance MOS

EMF09P02A P-Channel Logic Level Enhancement Mode Field Effect Transistor

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 9mΩ ID ‐62A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐25A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 1.

EMF09P02A Datasheet (202.96 KB)

EMF09P02A Datasheet Preview — Preview of EMF09P02A PDF

Datasheet Details

Part number:

EMF09P02A

Manufacturer:

Excelliance MOS

File Size:

202.96 KB

Description:

P-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMF09P02CS P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF09P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF02P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF04P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF04P02V P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMF11N02J MOSFET (Excelliance MOS)

EMF14A02G MOSFET (Excelliance MOS)

EMF14A02V MOSFET (Excelliance MOS)

TAGS

EMF09P02A P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMF09P02A Distributor