N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 13.5mΩ ID 48A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range V
Datasheet Details
Part number:
EMF14N02A
Manufacturer:
Excelliance MOS
File Size:
228.51 KB
Description:
N-channel logic level enhancement mode field effect transistor.