EMFA0P02J Datasheet - Excelliance MOS

EMFA0P02J P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -20V RDSON (MAX.) 100mΩ ID -3.4A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMFA0P02J LIMITS ±12 -3.

EMFA0P02J-ExcellianceMOS.pdf

EMFA0P02J Datasheet Preview — Preview of EMFA0P02J PDF

Datasheet Details

Part number:

EMFA0P02J

Manufacturer:

Excelliance MOS

File Size:

161.10 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMFA0P02J EMFA0P02J P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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