EMFA0B02G - MOSFET
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 100mΩ ID ‐3A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMFA0B02G LIMITS ±12 ‐3 ‐2.4
