Datasheet Details
| Part number | EMC04N08F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 360.85 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMC04N08F-ExcellianceMOS.pdf
|
| Part number | EMC04N08F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 360.85 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMC04N08F-ExcellianceMOS.pdf
|
BVDSS 75V RDSON (MAX.) 4.4mΩ ID 86A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating& Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 86 ID TC = 100 °C 54 IDM 200 Avalanche Current IAS 90 Avalanche Energy L = 0.1mH, ID=90A, RG=25Ω EAS 405 Repetitive Avalanche Energy2 L = 0.05mH EAR 202 Power Diss
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