FKBA3204 Dual N-Channel Enhancement Mode MOSFET

Description

FETek Technology Corp.* 100% EAS Guaranteed * Green Device Available * Super Low Gate Charge * Excellent CdV/dt effect decline * .
PRPAK5X6 Pin Configuration The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most appli.

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Datasheet Specifications

Part number: FKBA3204
Manufacturer: FETek
File Size: 634.36 KB
Datasheet: FKBA3204-FETek.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Applications

* The FKBA3204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Conti

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FKBA3204 Dual N-Channel Enhancement Mode MOSFET FETek

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