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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKCC8204
Dual N-Ch Fast Switching MOSFETs Product Summary
BVDSS 20V
RDSON 9mΩ
ID 9.5A
General Description
DFN2x3 Pin Configuration
The FKCC8204 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The FKCC8204 meet the RoHS and Green Pin1 Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
FKCC8204 Datasheet
