FKN3601 Datasheet - FETek

FKN3601, P-Channel MOSFET

FETek Technology Corp.* Green Device Available * Super Low Gate Charge * Excellent CdV/dt effect decline * Advanced high cell density.
The FKN3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and lo.

Applications

* The FKN3601 meet the RoHS and Green Product requirement with full function reliability approved. SOT 23 Pin Configurations Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Cont

FKN3601-FETek.pdf