C3195 - NPN silicon
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
(1) Pulse duration ≤300μs, duty cycle ≤2% 32 RDS(on) - On-State Resistance (mΩ) 28 24 20 16 12 8 4 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A GATE C
C3195 Features
* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist
