Part number:
30H80
Manufacturer:
FNK
File Size:
868.48 KB
Description:
N-channel enhancement mode mosfet.
* 30H80 (TO-220) / 30H80A (TO-262)
* 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* Avalanche Rated
* Lead Free and Green Devices Available (RoHS Compliant) Applications
30H80
FNK
868.48 KB
N-channel enhancement mode mosfet.
📁 Related Datasheet
30H80A - N-Channel Enhancement Mode MOSFET
(FNK)
30H80/30H80A
N-Channel Enhancement Mode MOSFET
Features
• 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) .
30H80G - N-Channel MOSFET
(ALLPOWER)
.
30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET
(ROUM)
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology desi.
30H10K - N-Channel Enhancement Mode Power MOSFET
(TGD)
Taiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD30H10K uses advanced trench technology and design to .
30H10K - 100A 30V N-channel Enhancement Mode Power MOSFET
(ROUM)
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology desi.
30H10K - N-Channel Trench Power MOSFET
(FUMAN)
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
30H10K(：S&CIC1689)
N-Channel Trench Power MOSFET
N-C hannel Trench Power MOSFET
General Descripti.
30H150 - N-Channel MOSFET
(FNK)
30H150
N-Channel Enhancement Mode MOSFET
Features
• 30V/150 A
RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V
• Super High Dense Cell Desig.
30HC - Silicon Epitaxial Planar Zener Diodes
(Semtech)
HC Series
Silicon Epitaxial Planar Zener Diodes
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black ST Brand
XXX
ST
Max. 3.9
.
