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30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	30H10I
Manufacturer	ROUM
File Size	847.66 KB
Description	100A 30V N-channel Enhancement Mode Power MOSFET
Datasheet	30H10I-ROUM.pdf

30H10I Product details

Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Features

Fast Switching.
Low ON Resistance(Rdson≤5.5mΩ).
Low Gate Charge(Typical:43nC).
Low Reverse Transfer Capacitance(Typical:215pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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Published: Jan 16, 2019 |