Part number:
30H10K
Manufacturer:
TGD
File Size:
1.18 MB
Description:
N-channel enhancement mode power mosfet.
* VDS =30V,ID =100A RDS(ON)
30H10K
TGD
1.18 MB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET
(ROUM)
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology desi.
30H10K - 100A 30V N-channel Enhancement Mode Power MOSFET
(ROUM)
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology desi.
30H10K - N-Channel Trench Power MOSFET
(FUMAN)
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
30H10K(：S&CIC1689)
N-Channel Trench Power MOSFET
N-C hannel Trench Power MOSFET
General Descripti.
30H150 - N-Channel MOSFET
(FNK)
30H150
N-Channel Enhancement Mode MOSFET
Features
• 30V/150 A
RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V
• Super High Dense Cell Desig.
30H80 - N-Channel Enhancement Mode MOSFET
(FNK)
30H80/30H80A
N-Channel Enhancement Mode MOSFET
Features
• 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) .
30H80A - N-Channel Enhancement Mode MOSFET
(FNK)
30H80/30H80A
N-Channel Enhancement Mode MOSFET
Features
• 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) .
30H80G - N-Channel MOSFET
(ALLPOWER)
.
30HC - Silicon Epitaxial Planar Zener Diodes
(Semtech)
HC Series
Silicon Epitaxial Planar Zener Diodes
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black ST Brand
XXX
ST
Max. 3.9
.
