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FNK06NS04E N-Channel Power MOSFET

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Description

FNK06NS04E FNK N-Channel Enhancement Mode Power MOSFET .
The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
FNK06NS04E
Manufacturer
FNK
File Size
1.11 MB
Datasheet
FNK06NS04E-FNK.pdf
Description
N-Channel Power MOSFET

Features

* VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ) Top View 18 27 36 45 Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switchin

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