FNK2012E - N-Channel Power MOSFET
FNK2012E Features
* VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < 13mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired
* Surface mount package Application
* Uni-directional load switch
* Bi-directional load switch FNK2012E
