FNK2012E
FNK
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N-channel power mosfet. The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
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Description
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low .
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FNK2302 - N-Channel Power MOSFET
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DESCRIPTION
The FNK 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
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DESCRIPTION
The FNK 2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5.
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Description
The FNK 2304 uses advanced trench technology to provide excellent RDS(ON) and low ga.