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FNK2012E N-Channel Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET .
The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
FNK2012E
Manufacturer
FNK
File Size
880.72 KB
Datasheet
FNK2012E-FNK.pdf
Description
N-Channel Power MOSFET

Features

* VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < 13mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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