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30H10K - N-Channel Trench Power MOSFET

FUMAN

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Datasheet Details

Part number	30H10K
Manufacturer	FUMAN
File Size	681.30 KB
Description	N-Channel Trench Power MOSFET
Datasheet	30H10K-FUMAN.pdf

30H10K Product details

Description

The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

Features

VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: May 25, 2019 |