19N20C - FQA19N20C

Fairchild Semiconductor

Datasheet Details

Part number	19N20C
Manufacturer	Fairchild ↗ Semiconductor
File Size	585.90 KB
Description	FQA19N20C
Datasheet	19N20C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V.
Low gate charge ( typical 40.5 nC).
Low Crss ( typical 85 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability G DS TO-3PN FQA Series D { G{.
◀▲.
{ S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C.

📁 19N20C Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 29, 2010 |