19N10V

100V N-Channel MOSFET

UNISONIC TECHNOLOGIES

19N10V Features

* RDS(ON) = 0.1Ω @VGS = 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( CRSS = typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain 1.Gate 3.Source

19N10V General Description

Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe, DMOS techno logy which has bee n tail ored esp ecially in the avalanche an d commutation mode to min imize on-state re sistance, provide sup erior s witching p er.

19N10V Datasheet (304.91 KB)

19N10V Datasheet Preview — Preview of 19N10V PDF

Datasheet Details

Part number:

19N10V

Manufacturer:

UNISONIC TECHNOLOGIES

File Size:

304.91 KB

Description:

100v n-channel mosfet.

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19N10V 100V N-Channel MOSFET UNISONIC TECHNOLOGIES

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19N10V Features

19N10V General Description

Datasheet Details

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