19N10 - N-CHANNEL POWER MOSFET

Unisonic Technologies

19N10 Datasheet Preview — Preview of 19N10 PDF

Datasheet Details

Part number	19N10
Manufacturer	Unisonic Technologies
File Size	253.33 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	19N10_UnisonicTechnologies.pdf

19N10 Product details

Description

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse.They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

RDS(ON) = 0.1Ω @VGS = 10 V.
Ultra low gate charge ( typical 19nC ).
Low reverse transfer Capacitance ( CRSS = typical 32pF ).
Fast switching capability.
Avalanche energy Specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain 1.Gate 3.Source.

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Published: May 1, 2011 |