19N10 Datasheet (Unisonic Technologies)

19N10, N-CHANNEL POWER MOSFET

Power MOSFET The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and wi

19N10 Features

* RDS(ON) = 0.1Ω @VGS = 10 V

* Ultra low gate charge ( typical 19nC )

* Low reverse transfer Capacitance ( CRSS = typical 32pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain 1.Gate 3.Source