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20N50 - FDP20N50

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V.
  • Low gate charge ( typical 45.6 nC).
  • Low Crss ( typical 27 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Datasheet preview – 20N50

Datasheet Details

Part number 20N50
Manufacturer Fairchild Semiconductor
File Size 1.05 MB
Description FDP20N50
Datasheet download datasheet 20N50 Datasheet
Additional preview pages of the 20N50 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com FDP20N50 500V N-Channel MOSFET May 2006 FDP20N50 500V N-Channel MOSFET Features • 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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