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28N50F FDA28N50F

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Description

FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* RDS(on) = 0.140Ω ( Typ. )@ VGS = 10V, ID = 14A
* Low Gate Charge ( Typ. 80nC)
* Low Crss ( Typ. 38pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability

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📁 Related Datasheet

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FDA28N50F Fairchild Semiconductor
Fairchild Semiconductor 28N50F-like datasheet