Description
These devices are N-channel Power MOSFETs
G(1)
developed using MDmesh™ M2 technology.Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.S(3)
AM15572V1
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
Table 1: Device summary
Marking
Package
D²PAK
28N60M2
I²PAK TO-220
TO-247
Packing Tape and reel
Tube
March
Features
- Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
VDS @ TJmax 650 V
RDS(on) max. 0.150 Ω
ID 22 A
Figure 1: Internal schematic diagram
D (2 TAB ).
- Extremely low gate charge.
- Excellent output capacitance (COSS) profile.
- 100% avalanche tested.
- Zener-protected.
28N60M2-STMicroelectronics.pdf
