Description
These FDmesh™ II Power MOSFETs with
6
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
$0Y
technology.Utilizing a new strip-layout vertical structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance.They are ideal for bridge
topologies and ZVS phase-shift converters.Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND
Table 1. Device summary
Marking
Packages
2
D PAK
28NM60ND
Features
- Order codes
VDS @ TJ max. RDS(on) max
ID
STB28NM60ND
STF28NM60ND 650 V
STP28NM60ND
0.150 Ω
23 A
STW28NM60ND.
- Intrinsic fast-recovery body diode.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche
capabilities.
28NM60ND-STMicroelectronics.pdf
