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28NM60ND - N-Channel MOSFET

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28NM60ND Product details

Description

These FDmesh™ II Power MOSFETs with 6  intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology.Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.They are ideal for bridge topologies and ZVS phase-shift converters.Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND Table 1. Device summary Marking Packages 2 D PAK 28NM60ND

Features

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