Datasheet4U Logo Datasheet4U.com

2N3417 NPN General Purpose Amplifier

2N3417 Description

2N3416 / 2N3417 Discrete POWER & Signal Technologies 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as .

2N3417 Applications

* involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3416 / 2N3417 625 5.0 83.3 200

📥 Download Datasheet

Preview of 2N3417 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N3417
Manufacturer
Fairchild Semiconductor
File Size
24.91 KB
Datasheet
2N3417_FairchildSemiconductor.pdf
Description
NPN General Purpose Amplifier

📁 Related Datasheet

  • 2N341 - N-P-N GROWN SILICON TRANSISTORS (New Jersey Semi-Conductor)
  • 2N3410DCSM - Dual Bipolar NPN Devices (Semelab Plc)
  • 2N3414 - NPN SILICON TRANSISTOR (Micro Electronics)
  • 2N3418 - NPN MEDIUM POWER SILICON TRANSISTOR (Microsemi Corporation)
  • 2N3418S - NPN Meduim Power Silicon Transistor (Aeroflex)
  • 2N3419 - NPN MEDIUM POWER SILICON TRANSISTOR (Microsemi Corporation)
  • 2N3419S - NPN MEDUIM POWER SILICON TRANSISTOR (Microsemi)
  • 2N340 - N-P-N GROWN SILICON TRANSISTORS (New Jersey Semi-Conductor)

📌 All Tags

NPN General Purpose Amplifier Fairchild Semiconductor
Fairchild Semiconductor 2N3417-like datasheet