| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
STMicroelectronics | 2SC5200 | TRANS NPN 230V 15A TO-264 | DigiKey | 0 | 350 units |
$2.25
|
🛒 Buy Now |
2SC5200
Fairchild Semiconductor
430.09 KB
Npn epitaxial silicon transistor.
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
* High-Fidelity Audio Output Amplifier
* General Purpose Power Amplifier.
* High Current Capability: IC = 17A.
* High Power Dissipation : 150watts.
* High Frequency : 30MHz.
* High Voltage : VCEO=250V
* Wide S.O.A for reliable operation.
* Excellent Gain Linearity for low THD.
* Complement to 2SA1943/FJL4215.
📁 Related Datasheet
2SC5200 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Remended for 100W High Fideli.
2SC5200 - 150 Watt Silicon NPN Power Transistors
(Thinki Semiconductor)
2SC5200
®
Pb Free Plating Product
2SC5200
Pb
150 Watt Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943.
2SC5200 - NPN Transistor
(ON Semiconductor)
NPN Epitaxial Silicon Transistor
FJL4315, 2SC5200
Features
• High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .
2SC5200 - NPN Transistor
(STMicroelectronics)
2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
■ High breakdown voltage VCEO = 230 V
■ Typical fT = 30 MHz
t.
2SC5200 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC5200
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V.
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Toshiba America Electronic Components
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Trans GP BJT NPN 230V 15A 3-Pin TO-3P(N) - Rail/Tube (Alt: 2SC5200N(S1,E,S))
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| 2SC5200-O(Q) |
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TRANSISTOR
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