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33N10

FQP33N10

33N10 Features

* 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

33N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

33N10 Datasheet (572.41 KB)

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Datasheet Details

Part number:

33N10

Manufacturer:

Fairchild Semiconductor

File Size:

572.41 KB

Description:

Fqp33n10.

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33N10 FQP33N10 Fairchild Semiconductor

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