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33N10 FQP33N10

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Description

FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number
33N10
Manufacturer
Fairchild Semiconductor
File Size
572.41 KB
Datasheet
33N10-FairchildSemiconductor.pdf
Description
FQP33N10

Features

* 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

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