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3N60A4

N-Channel IGBT

3N60A4 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications

3N60A4 Datasheet (166.03 KB)

Preview of 3N60A4 PDF

Datasheet Details

Part number:

3N60A4

Manufacturer:

Fairchild Semiconductor

File Size:

166.03 KB

Description:

N-channel igbt.
Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switch.

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3N60A4 N-Channel IGBT Fairchild Semiconductor

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