3N60Z Datasheet - Unisonic Technologies

600V N-CHANNEL POWER MOSFET

3N60Z Features

* RDS(ON) = 3.6Ω @VGS = 10 V

* Ultra low gate charge ( typical 10 nC )

* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain www.DataSheet.

3N60Z General Description

Power MOSFET 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a.

3N60Z Datasheet (424.82 KB)

3N60Z Datasheet Preview — Preview of 3N60Z PDF

Datasheet Details

Part number:

3N60Z

Manufacturer:

Unisonic Technologies

File Size:

424.82 KB

Description:

600v n-channel power mosfet.

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3N60Z 600V N-CHANNEL POWER MOSFET Unisonic Technologies

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3N60Z Features

3N60Z General Description

Datasheet Details

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Description:

3N60Z Distributor