3N60 Datasheet - nELL

3N60 N-Channel Power MOSFET

The Nell 3N60 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC .

3N60 Features

* RDS(ON) = 3.6Ω@VGS = 10V Ultra low gate charge(13nC max.) Low reverse transfer capacitance (CRSS = 5.5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (3N60F) D D G S TO-252 (D-PAK) (3N60G) GDS TO-220A

3N60-nELL.pdf